Semiconductor device

Details Semiconductor device Semiconductor device

2011-01-04

2011-01-04

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29345, C257SE21409, C438S297000

Reexamination Certificate

active

07863692

ABSTRACT:
Embodiments relate to a semiconductor device in which a first oxide layer may be formed in a channel area under the gate electrode. An electric field loaded on the gate electrode may be reduced when electrons are implanted from the source to the drain, the acceleration of electrons may be reduced, and the electrons implanted in the second oxide layer may be restrained. This may improve the hot-carrier effect, resulting in the increased reliability of the semiconductor device.

REFERENCES:
patent: 2003/0146478 (2003-08-01), Yen et al.
patent: 2005/0012087 (2005-01-01), Sheu et al.
patent: 2005-0063317 (2005-06-01), None

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