Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Reexamination Certificate
2011-07-05
2011-07-05
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
C257S488000, C257S491000, C257S492000, C257S493000, C257S339000
Reexamination Certificate
active
07973382
ABSTRACT:
A gate electrode20and first field plates22ato22dand23are provided on a field oxide film19. The gate electrode20and first field plates22ato22dand23are covered with an insulating film24. A high-voltage wiring conductor28is provided on the insulating film24. A shielding electrode29is provided between the first field plate22apositioned closest to a source side and the high-voltage wiring conductor28.
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Goodwin David
Loke Steven
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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