Semiconductor device

Details Semiconductor device Semiconductor device

2011-04-05

2011-04-05

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000, C257S256000

Reexamination Certificate

active

07919818

ABSTRACT:
A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in parallel and a current detecting part including a detecting resistor capable of detecting a current passing through the current detecting IGBT. The base region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other, and the emitter region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other through the detecting resistor.

REFERENCES:
patent: 6268990 (2001-07-01), Ogura et al.
patent: 6333604 (2001-12-01), Robb
patent: 6680513 (2004-01-01), Tomomatsu
patent: 2001/0042886 (2001-11-01), Yoshida et al.
patent: 2008/0203533 (2008-08-01), Kaneko et al.
patent: 09-260592 (1997-10-01), None
Kaneko, et al., “A 800 V Hybrid IGBT Having a High-Speed Internal Diode for Power-Supply Applications,” Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs, May 27-30, 2007, Jeju, Korea.

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