Semiconductor device

Details Semiconductor device Semiconductor device

2011-04-19

2011-04-19

Gebremariam, Samuel A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000, C257S371000, C257S637000, C257S638000, C257S639000, C257SE27046

Reexamination Certificate

active

07928512

ABSTRACT:
A semiconductor device is provided herein, which includes a substrate having a first-type MOS transistor, an input/output (I/O) second-type MOS transistor, and a core second-type MOS transistor formed thereon. The semiconductor device further includes a first stress layer and a second stress layer. The first stress layer is disposed on the first-type MOS transistor, or on the first-type MOS transistor and the I/O second-type MOS transistor. The second stress layer is disposed on the core second-type MOS transistor.

REFERENCES:
patent: 7187038 (2007-03-01), Morin et al.
patent: 7378318 (2008-05-01), Runyon et al.
patent: 2006/0226490 (2006-10-01), Burnett et al.
patent: 1449585 (2003-10-01), None

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