Semiconductor device

Details Semiconductor device Semiconductor device

2011-06-14

2011-06-14

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S211000, C365S228000, C365S189110

Reexamination Certificate

active

07961500

ABSTRACT:
There is provided a technique for ensuring both an SNM and a write margin simultaneously in a semiconductor device having static memory cells. A semiconductor device has a plurality of static memory cells. The semiconductor device includes a memory cell array having the static memory cells arranged in a matrix, a temperature sensor circuit for sensing a temperature in the semiconductor device, and a word driver for controlling a voltage supplied to a word line of the memory cell array based on an output of the temperature sensor circuit at the time of writing to or reading from a memory cell.

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