Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S213000, C257S288000, C257SE29040, C257SE21176, C438S151000, C438S163000
Reexamination Certificate
active
07923788
ABSTRACT:
A semiconductor device has a plurality of fins formed on a semiconductor substrate to be separated from each other, a first contact region which connects commonly one end side of the plurality of fins, a second contact region which connects commonly the other end side of the plurality of fins, a gate electrode arranged to be opposed to at least both side surfaces of the plurality of fins by sandwiching a gate insulating film therebetween, a source electrode including the first contact region and the plurality of fins on a side closer to the first contact region than the gate electrode, and a drain electrode including the second contact region and the plurality of fins on a side closer to the second contact than the gate electrode. The ratio Rd/Rs of a resistance Rd of each fin in the drain region to a resistance Rs of each fin in the source region is larger than 1.
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U.S. Appl. No. 12/494,885, filed Jun. 30. 2009, Inaba.
Aoki Nobutoshi
Inaba Satoshi
Izumida Takashi
Ohguro Tatsuya
Okano Kimitoshi
Kabushiki Kaisha Toshiba
Mandala Victor
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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