Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-03

2011-05-03

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27084

Reexamination Certificate

active

07936001

ABSTRACT:
In a pair of adjacent stack contact and stack contact in the semiconductor device, the plugs and the plugs are disposed so that a center-to-center distance of the plugs extending through a second interlayer insulating film, which is thicker than the first interlayer insulating film, is larger than a center-to-center distance of the plugs extending through the first interlayer insulating film.

REFERENCES:
patent: 2003/0006444 (2003-01-01), Amo et al.
patent: 2003/0215997 (2003-11-01), Hachisuka et al.
patent: 2004/0183111 (2004-09-01), Shinkawata
patent: 2005/0001253 (2005-01-01), Sugimura
patent: 2006/0138561 (2006-06-01), Seo et al.
patent: 2007/0123032 (2007-05-01), Yamazaki
patent: 2008/0012146 (2008-01-01), Nishimura
patent: 2002-203812 (2002-07-01), None
patent: 2002-353334 (2002-12-01), None
patent: 2003-23111 (2003-01-01), None

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