Semiconductor device

Details Semiconductor device Semiconductor device

2011-06-28

2011-06-28

Ho, Hoang-Quan T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S754000, C257SE27064, C257SE21192, C257SE21195, C257SE29160, C257SE29162, C438S199000, C438S216000, C438S287000, C438S591000

Reexamination Certificate

active

07968956

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a p-channel MIS transistor formed on the substrate, the p-channel transistor having a first gate dielectric formed on the substrate and a first gate electrode layer formed on the first dielectric, and an n-channel MIS transistor formed on the substrate, the n-channel transistor having a second gate dielectric formed on the substrate and a second gate electrode layer formed on the second dielectric. A bottom layer of the first gate electrode layer in contact with the first gate dielectric and a bottom layer of the second gate electrode layer in contact with the second gate dielectric have the same orientation and the same composition including Ta and C, and a mole ratio of Ta to a total of C and Ta, (Ta/(Ta+C)), is larger than 0.5.

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