Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-03

2011-05-03

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S239000, C257SE21334

Reexamination Certificate

active

07936018

ABSTRACT:
A semiconductor device includes an active zone doped according to a first type; a drain zone formed in the active zone and doped according to a second type; a source zone formed in the active zone and doped according to the second type; an insulated gate zone separated from the active zone by an insulating layer; a deep well, doped according to the second type such that the active zone is located between the gate zone and the well; a floating gate zone formed in the active zone under a space existing between the drain zone and the source zone, the floating gate zone including defects introducing deep levels in the bandgap of the semiconductor material, the deep levels being suited to trap carriers corresponding to the first type such that a charge state of the floating gate zone is modified and a drain source current varies due to the presence of a supplementary potential on the floating gate zone, a concentration of defects in the floating gate zone being strictly greater than 1018cm−3.

REFERENCES:
patent: 6917078 (2005-07-01), Bhattacharyya
patent: 7851827 (2010-12-01), Bhattacharyya
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