Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-24

2011-05-24

Chu, Chris (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257SE23151, C257S775000, C257S776000, C438S612000, C438S666000

Reexamination Certificate

active

07948094

ABSTRACT:
The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.

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