Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-29

2011-03-29

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S314000, C257S315000, C257S316000, C257S317000, C257S318000, C257S319000, C257SE29001

Reexamination Certificate

active

07915655

ABSTRACT:
A semiconductor device includes a semiconductor substrate and a metal-oxide semiconductor transistor. A first dielectric layer of the metal oxide semiconductor transistor overlaps source and drain electrodes and a channel region of the transistor. A first drain region is away from the channel region and the first dielectric layer. A second drain region is between the first drain region and the channel region. A gate electrode is on the first dielectric layer and connected to a gate wire, and includes first and second gate layers and a dielectric layer therebetween. The first gate layer has one edge laterally spaced from the first drain region and resting over the second drain region, and is isolated from the gate wire. The second gate layer is over the first gate layer and is connected to the gate wire.

REFERENCES:
patent: 4804637 (1989-02-01), Smayling et al.
patent: 5583607 (1996-12-01), Fujioka et al.
patent: 2003/0034520 (2003-02-01), Kusunoki
patent: 8-107202 (1996-04-01), None
patent: 9-266255 (1997-10-01), None
patent: 11-68070 (1999-03-01), None
patent: 2005-303037 (2005-10-01), None

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