Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-17

2011-05-17

Smith, Zandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S282000, C257S283000, C257SE29201, C257SE29257, C438S270000

Reexamination Certificate

active

07943991

ABSTRACT:
A semiconductor device is discloses that includes an n-type semiconductor substrate; an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately; p-type channel regions on the alternating conductivity type layer; and trenches formed from the surfaces of the p-type channel regions down to respective n-type drift regions. The bottom of each trench is over the pn-junction between the p-type partition region and the n-type drift region. The semiconductor device facilitates preventing the on-resistance from increasing, obtaining a higher breakdown voltage, and reducing the variations caused in the characteristics thereof.

REFERENCES:
patent: 4316203 (1982-02-01), Tohgei
patent: 2000-260984 (2000-09-01), None
patent: 2001-332726 (2001-11-01), None
patent: 2002-76339 (2002-03-01), None
patent: 2002-184985 (2002-06-01), None
patent: 2003-124464 (2003-04-01), None
patent: 2004-200441 (2004-07-01), None
patent: 2005-19528 (2005-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2682508