Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-12

2011-07-12

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000

Reexamination Certificate

active

07977723

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an active region formed in the semiconductor substrate and extending in a first direction, the active region including a transistor sub-region and a capacitor sub-region, a first trench extending around the transistor sub-region, an isolation layer disposed in the first trench, a second trench extending around the capacitor sub-region, a first transistor including a first insulating layer disposed on the transistor sub-region, the first transistor including a first conductive layer disposed on the first insulating layer, and a first capacitor including a second insulating layer extending over the capacitor sub-region and a sidewall of the second trench, the first capacitor including a second conductive layer disposed on the second insulating layer, the active region having an end portion in the first direction opposite to the transistor sub-region and extending across the first capacitor.

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M. Wada et al., “A Folded Capacitor Cell (F.C.C.) for Future”, 1984, pp. 244-247, VLSI Reasearch Center, Toshiba Corporation, Kawasaki, Japan.
Korean Office Action dated Oct. 28, 2010, issued in corresponding Korean Patent Application No. 10-2009-0002642.

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