Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2011-01-04
2011-01-04
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S351000, C257S352000, C257S627000, C257SE29003, C257SE29004, C257SE27112
Reexamination Certificate
active
07863713
ABSTRACT:
For equalizing the rising and falling operating speeds in a CMOS circuit, it is necessary to make the areas of a p-type MOS transistor and an n-type MOS transistor different from each other due to a difference in carrier mobility therebetween. This area unbalance prevents an improvement in integration degree of semiconductor devices. The NMOS transistor and the PMOS transistor each have a three-dimensional structure with a channel region on both the (100) plane and the (110) plane so that the areas of the channel regions and gate insulating films of both transistors are equal to each other. Accordingly, it is possible to make the areas of the gate insulating films and so on equal to each other and also to make the gate capacitances equal to each other. Further, the integration degree on a substrate can be improved twice as much as that in the conventional technique.
REFERENCES:
patent: 4768076 (1988-08-01), Aoki et al.
patent: 6037610 (2000-03-01), Zhang et al.
patent: 6900503 (2005-05-01), Oh et al.
patent: 6903393 (2005-06-01), Ohmi et al.
patent: 2005/0275018 (2005-12-01), Venkatesan et al.
patent: 2006/0084244 (2006-04-01), Yeo et al.
patent: 2007/0132009 (2007-06-01), Takeuchi et al.
patent: 0 818 819 (1998-01-01), None
patent: 07-086422 (1995-03-01), None
patent: 2003-115587 (2003-04-01), None
patent: 2005-327766 (2005-11-01), None
patent: 1998-0012115 (1998-04-01), None
patent: 10-0450683 (2004-03-01), None
patent: WO 2005/036651 (2005-04-01), None
G. Gildenblat, “One-flux Theory of a Non-absorbing Barrier,” Journal of Applied Physics, vol. 91:12, Jun. 2002, pp. 9883-9886.
Ohmi Tadahiro
Teramoto Akinobu
Watanabe Kazufumi
Foley & Lardner LLP
Foundation for Advancement of International Science
Tohoku University
Tran Long K
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2677749