Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Housing or package filled with solid or liquid electrically...
Reexamination Certificate
2011-08-30
2011-08-30
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Housing or package filled with solid or liquid electrically...
C257S692000
Reexamination Certificate
active
08008767
ABSTRACT:
The invention offers technology for suppressing damage to semiconductor devices due to temperature changes. When flip-chip mounting a silicon chip on a buildup type multilayer substrate having a structure with a thinned core, a core having a small coefficient of thermal expansion is used in the multilayer substrate, and the coefficient of thermal expansion and glass transition point of the underfill are appropriately designed in accordance with the thickness and coefficient of thermal expansion of the core. By doing so, it is possible to relieve stresses inside the semiconductor package caused by deformation of the multilayer substrate due to temperature changes, and thereby to suppress damage to the semiconductor package due to temperature changes.
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English translation of JP1999116659A.
English translation of JP2005097524A.
Notice of Rejection dated Mar. 29, 2011 in Patent App. No. 2008534303.
Hirose Hiroshi
Itoh Teppei
Tachibana Kenya
Tanaka Hiroyuki
Wada Masahiro
Carpenter Robert
Lloyd Laura M.
Richards N Drew
Sheldon Jeffrey G.
Sheldon Mak & Anderson
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