Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2011-04-19
2011-04-19
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S737000, C257S738000, C257SE23021, C257SE23069
Reexamination Certificate
active
07928583
ABSTRACT:
A semiconductor device includes a semiconductor substrate; a sealing resin layer formed on a top face of the semiconductor substrate; a metal post formed on the top face of the semiconductor substrate such that a top face of the metal post is exposed through the sealing resin layer; a projecting electrode formed on the top face of the metal post; and a low-elasticity resin layer made of a resin material with an elasticity modulus lower than that of the sealing resin layer and formed on the top face of the sealing resin layer such that part of the low-elasticity resin layer lies between the projecting electrode and the sealing resin layer.
REFERENCES:
patent: 2004/0082101 (2004-04-01), Honda
patent: 2005/0146030 (2005-07-01), Miyazaki
patent: 2007/0075423 (2007-04-01), Ke et al.
patent: 2004-161886 (2004-06-01), None
Higuchi Shingo
Okumura Hiroshi
Fish & Richardson P.C.
Nguyen Dilinh P
Rohm & Co., Ltd.
Sefer A.
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