Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-30

2011-08-30

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S367000, C257SE29005, C257SE29262

Reexamination Certificate

active

08008717

ABSTRACT:
A semiconductor device of the present invention has a first-conductivity-type substrate having second-conductivity-type base regions exposed to a first surface thereof; trench gates provided to a first surface of the substrate; first-conductivity-type source regions formed shallower than the base regions; a plurality of second-conductivity-type column regions located between two adjacent trench gates in a plan view, while being spaced from each other in a second direction normal to the first direction; the center of each column region and the center of each base contact region fall on the center line between two trench gates; and has no column region formed below the trench gates.

REFERENCES:
patent: 2002-073669 (2002-03-01), None
patent: 2006-310621 (2006-09-01), None
200V Trench Filing Type Super Junction MOSFET with Orthogonal Gate Structure, pp. 27-40, dated May 27-30, 2007.

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