Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-16
2011-08-16
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S903000
Reexamination Certificate
active
07999385
ABSTRACT:
An exemplary embodiment of the present invention is a semiconductor device having a regular layout region and an irregular layout region formed on one chip, including: a lower conductive layer; an interlayer insulating film formed on the lower conductive layer; an upper interconnect layer formed on the interlayer insulating film; and connection plugs disposed to electrically connect the lower conductive layer and the upper interconnect layer at a substantially shortest distance. In at least part of the regular layout region, the lower conductive layer and the upper interconnect layer are electrically connected to each other through at least two connection plugs and an intermediate connection layer for electrically connecting the at least two connection plugs, the at least two connection plugs being disposed at an immediately above position extending from immediately above the lower conductive layer and a shift position spaced apart from the immediately above position, respectively.
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Clark S. V
Renesas Electronics Corporation
Sughrue & Mion, PLLC
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