Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-01-18
2011-01-18
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
07872907
ABSTRACT:
There is provided a semiconductor device that enables high-speed data read and reduces the area of a drive circuit for activating a word line. By signal transmission through a common word line having a low resistance and coupled at a plurality of points to a word line, it is possible to read data at high speed. Further, since the common word line is provided common to a plurality of memory blocks, a word line driver can be provided common to the memory blocks. Further, by disposing a latch circuit, corresponding to a sub-digit line, for holding the active state of the common word line, it is possible to transmit a row selection signal during data write through the common word line and thereby reduce a metal wiring layer.
REFERENCES:
patent: 6683807 (2004-01-01), Hidaka
patent: 6999341 (2006-02-01), Ooishi
patent: 7016222 (2006-03-01), Morikawa
patent: 7489001 (2009-02-01), Hidaka
patent: 2005/0036361 (2005-02-01), Fukuzumi
patent: 2003-077267 (2003-03-01), None
patent: 2007-109313 (2007-04-01), None
Murai Yasumitsu
Okayama Shota
Miles & Stockbridge P.C.
Phung Anh
Renesas Electronics Corporation
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