Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-19

2011-07-19

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S205000, C365S189090

Reexamination Certificate

active

07983072

ABSTRACT:
In one aspect of the present invention, a semiconductor device A semiconductor device may include a SRAM cell having a first inverter, a second inverter, a first transfer transistor and a second transistor, the first inverter having a first load transistor and a first driver transistor connected to the first load transistor, the second inverter having a second load transistor and a second driver transistor connected to the second load transistor, a voltage supplying circuit configured to supply a voltage to one of the terminals of the first driver transistor and one of the terminals of the second driver transistor, the voltage which is one of more than a GND voltage and less than a GND voltage.

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Digh Hisamoto, et al., “A Folded-channel MOSFET for Deep-sub-tenth Micron Era”, IEDM, IEEE, 1998, 3 Pages.
Xuejue Huang, et al., “Sub 50-nm FinFET: PMOS,” IEDM, IEEE, 1999, 4 Pages.

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