Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S379000, C257S380000, C257S381000, C257SE29345

Reexamination Certificate

active

07939874

ABSTRACT:
A semiconductor device has semiconductor elements formed on a silicon substrate. A first one of the semiconductor elements has a region formed with a surface orientation of <100>. A second one of the semiconductor elements has a region formed with a surface orientation of <110>or <111>. A third one of the semiconductor elements has a region formed with a surface orientation different from the respective surface orientations of the regions of the first and second semiconductor elements.

REFERENCES:
patent: 2002359293 (2002-12-01), None
patent: 2005109498 (2005-04-01), None

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