Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S341000, C438S286000
Reexamination Certificate
active
07968941
ABSTRACT:
A semiconductor device includes: an epitaxial layer; a body layer, formed in the epitaxial layer, which includes a channel region; a source layer disposed in superposition on the body layer; a gate insulator, formed on the epitaxial layer, which is in a ring shape surrounding the source layer; a gate electrode formed through the gate insulator; a drift layer, formed in the epitaxial layer, which is in a ring shape surrounding the body layer; and a drain layer formed in the surface of the epitaxial layer and disposed opposite to the source layer. The body layer is disposed such that the boundary surface at an end in the gate-width direction is in contact with the undersurface of the gate insulator. The gate insulator has a thick film portion thicker than a part above the channel region in the gate-length direction at least in a part where the gate insulator is in contact with the boundary surface of the body layer at the end in the gate-width direction.
REFERENCES:
patent: 2009/0114987 (2009-05-01), Tanaka
patent: 1422442 (2003-06-01), None
patent: 1755944 (2006-04-01), None
patent: 10233508 (1998-09-01), None
patent: 2001513270 (2001-08-01), None
Chinese Office Action for corresponding CN Application No. 200910127749.1, dated Aug. 17, 2010, pp. 1-11 China.
Fujita Kazunori
Sasada Kazuhiro
Yamashita Tomio
Yoneda Haruki
Ditthavong Mori & Steiner, P.C.
Doan Theresa T
Sanyo Electric Co,. Ltd.
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