Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-24

2011-05-24

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C438S014000, C257SE27111, C257SE27113

Reexamination Certificate

active

07947979

ABSTRACT:
An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate100of an active matrix EL panel includes a vapor deposition region101having a film formed by a vapor deposition method. In the vapor deposition region101, a pixel region102is provided. A TEG109is provided in the vapor deposition region101having a film formed in a vapor deposition step and outside of the pixel region102. A measurement terminal portion110for measuring the TEG109is provided outside of a sealing region103.

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patent: 2007/0018680 (2007-01-01), Jeon et al.
patent: 2004-341216 (2004-12-01), None

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