Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2011-03-22
2011-03-22
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C257SE51005
Reexamination Certificate
active
07910929
ABSTRACT:
An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 5358925 (1994-10-01), Neville Connell et al.
patent: 5453858 (1995-09-01), Yamazaki
patent: 5514879 (1996-05-01), Yamazaki
patent: 5591987 (1997-01-01), Yamazaki et al.
patent: 5614732 (1997-03-01), Yamazaki
patent: 5648293 (1997-07-01), Hayama et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5693238 (1997-12-01), Schmitt et al.
patent: 5701167 (1997-12-01), Yamazaki
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5811328 (1998-09-01), Zhang et al.
patent: 5849601 (1998-12-01), Yamazaki
patent: 5859445 (1999-01-01), Yamazaki
patent: 6011277 (2000-01-01), Yamazaki
patent: 6023075 (2000-02-01), Yamazaki
patent: 6124155 (2000-09-01), Zhang et al.
patent: 6166399 (2000-12-01), Zhang et al.
patent: 6232242 (2001-05-01), Hata et al.
patent: 6252249 (2001-06-01), Yamazaki
patent: 6296735 (2001-10-01), Marxer et al.
patent: 6306213 (2001-10-01), Yamazaki
patent: 6335213 (2002-01-01), Zhang et al.
patent: 6528816 (2003-03-01), Jackson et al.
patent: 6533534 (2003-03-01), Schmitt et al.
patent: 6673255 (2004-01-01), Marxer et al.
patent: 6683012 (2004-01-01), Hata et al.
patent: 6756258 (2004-06-01), Zhang et al.
patent: 6797548 (2004-09-01), Zhang et al.
patent: 6847064 (2005-01-01), Zhang et al.
patent: 7067844 (2006-06-01), Yamazaki
patent: 7098479 (2006-08-01), Yamazaki
patent: 7115902 (2006-10-01), Yamazaki
patent: 2005/0012097 (2005-01-01), Yamazaki
patent: 2005/0017243 (2005-01-01), Zhang et al.
patent: 2006/0231882 (2006-10-01), Kim et al.
patent: 2007/0018165 (2007-01-01), Yamazaki
patent: 2008/0044962 (2008-02-01), Zhang et al.
patent: 0 473 988 (1992-03-01), None
patent: 60-098680 (1985-06-01), None
patent: 61-087371 (1986-05-01), None
patent: 01-181512 (1989-07-01), None
patent: 04-242724 (1992-08-01), None
patent: 05-109629 (1993-04-01), None
patent: 06-045354 (1994-02-01), None
patent: 06-077483 (1994-03-01), None
patent: 06-346245 (1994-12-01), None
patent: 07-045833 (1995-02-01), None
patent: 08-195492 (1996-07-01), None
patent: 11-121761 (1999-04-01), None
patent: 2002-246605 (2002-08-01), None
patent: 2005-049832 (2005-02-01), None
patent: 2005-167051 (2005-06-01), None
patent: 2005-203638 (2005-07-01), None
patent: 2007-005508 (2007-01-01), None
patent: 2007-035964 (2007-02-01), None
Hyun Jung Lee et al.; “Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors”;Applied Physics Letters, vol. 92, pp. 083509-1-083509-3; 2008.
Mohammad R. Esmaeili-Rad et al.; “Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements”;Applied Physics Letters, vol. 91; pp. 113511-1-113511-3; 2007.
Czang-Ho Lee et al.; “Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric”;IEEE Transactions on Electron Devices, vol. 54, No. 1; pp. 45-51; Jan. 1, 2007.
Andrei Sazonov et al.; “Low-Temperature Materials and Thin Film Transistors for Flexible Electronics”;Proceedings of the IEEE, vol. 93, No. 8; pp. 1420-1428; Aug. 2005.
Mohammad R. Esmaeili-Rad et al.; “Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric”;Journal of Applied Physics, vol. 102; pp. 064512-1-064512-7; 2007.
Czang-Ho Lee et al.; “Top-Gate TFTs Using 13.56 MHz PECVD Microcrystalline Silicon”;IEEE Electron Device Letters, vol. 26, No. 9; pp. 637-639; Sep. 5, 2005.
Czang-Ho Lee et al.; “Postdeposition thermal annealing and material stability of 75° C. hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films”;Journal of Applied Physics, vol. 98; pp. 034305-1-034305-7; Aug. 4, 2005.
Czang-Ho Lee et al.; “High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition”;Applied Physics Letters, vol. 86; pp. 222106-1-222106-3; May 24, 2005.
Czang-Ho Lee et al.; “High Mobility N-Channel and P-Channel Nanocrystalline Silicon Thin-Film Transistors”;IEDM 05: Technical Digest of International Electron Devices Meeting; pp. 937-940; 2005.
Czang-Ho Lee et al.; “Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities”;Applied Physics Letters, vol. 89; pp. 252101-1-252101-3; Dec. 18, 2006.
C.-H Lee et al.; “How to Achieve High Mobility Thin Film Transistors by Direct Deposition of Silicon Using 13.56 MHz RF PECVD?”;IEDM; pp. 295-298; 2006.
Mohammad R. Esmaeili-Rad et al., “High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays”;IEEE-IEDM; pp. 303-306; 2006.
Toshiaki Arai et al.; “41.2: Micro Silicon Technology for Active Matrix OLED Display”;SID 07 Digest: SID International Symposium Digest of Technical Papers, vol. XXXVIII, pp. 1370-1373; 2007.
Akimoto Kengo
Takayama Toru
Dickey Thomas L
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2654460