Semiconductor device

Details Semiconductor device Semiconductor device

2011-06-14

2011-06-14

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S410000, C257S412000, C257SE29255

Reexamination Certificate

active

07960793

ABSTRACT:
According to one embodiment, it is possible to provide a semiconductor device provided with an MIS transistor which has an effective work function being, as much as possible, suitable for low threshold operation. A CMIS device provided with an electrode having an optimal effective work function and enabling low threshold operation to achieve by producing an in-gap level by the addition of a high valence metal in an Hf (or Zr) oxide and changing a position of the in-gap level by nitrogen or fluorine or the like has been realized.

REFERENCES:
patent: 2008/0315328 (2008-12-01), Yu et al.
patent: 2009/0166747 (2009-07-01), Niimi et al.
U.S. Appl. No. 12/189,400, filed Aug. 11, 2008, Shimizu, et al.
M. Kadoshima, et al., “Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS”, 2007 Symposium on VLSI Technology Digest of Technical Papers, 2007, pp. 66-67.
P. Sivasubramani, et al., Dipole Moment Model Explaining nFET VtTuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics, 2007 Symposium on VLSI Technology Digest of Technical Papers, 2007, pp. 68-69.
U.S. Appl. No. 12/714,841, filed Mar. 1, 2010, Shimizu, et al.

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