Semiconductor device

Details Semiconductor device Semiconductor device

2001-01-08

2001-09-18

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S175000, C365S179000

Reexamination Certificate

active

06292390

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device using a bipolar transistor.
2. Description of the Related Art
Conventionally, a bipolar transistor has been employed as a current amplifying element which receives a base current as an input and outputs a collector current. For example, when positive collector-emitter voltage V
CE
and base-emitter voltage V
BE
(V
CE
>V
BE
) are applied to an npn bipolar transistor, collector current I
C
takes amplified positive values with respect to various values of base-emitter voltage V
BE
, and in this case, base current I
B
is also positive.
Since the conventional bipolar transistor can only perform a predetermined operation, this transistor has a limited application range.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a semiconductor device using a novel bipolar transistor which can flow a negative base current in addition to a positive base current depending on a base potential.
According to the present invention, there is provided a semiconductor device using a bipolar transistor in which collector-emitter voltage V
CE
is set to satisfy condition I
BE
<I
CB
where a forward base current in the base-emitter path is represented by I
BE
and a reverse base current in the collector-base path is represented by I
CB
.
The bipolar transistor is connected to a field effect transistor (FET), and the source or drain of this FET and the base of the bipolar transistor are formed as a common region.
According to the present invention, there is provided a semiconductor device wherein the source or drain and the base of a bipolar transistor are formed adjacent to each other, and their lead electrodes are commonly provided.
According to the present invention, there is provided a semiconductor which uses a plurality of cells and a semiconductor substrate common to these cells is used as a collector region.
According to the present invention, there is provided a semiconductor device wherein a MOS transistor is formed in a base region of a bipolar transistor.
Furthermore, according to the present invention, there is provided a semiconductor device wherein in adjacent cells, their bases oppose each other through a field insulating film.
In each of the above-mentioned semiconductor devices, a collector-emitter voltage is set to be a high voltage, so that reverse base current I
CB
in the collector-base path larger than the forward base current I
BE
in the base-emitter path can flow upon a change in base potential, i.e., base-emitter voltage V
BE
, and a transistor in which a base current has not only a positive region but also a negative region can be realized. The bipolar transistor and an FET can be combined to realize a semiconductor device with higher degree of integration.


REFERENCES:
patent: 6049494 (2000-04-01), Sakui et al.

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