1979-11-15
1981-06-30
Edlow, Martin H.
357 15, 357 46, 357 48, 357 86, H01L 2934
Patent
active
042765560
ABSTRACT:
A semiconductor device including a diode and a bipolar transistor which are connected to each other and formed in an isolated area of a semiconductor layer has a diffused region formed between a base region of the bipolar transistor and a formation region of the diode across the isolated area. The diffused region has the same conductivity type as that of the base region, so that a PNPN diode effect does not occur.
REFERENCES:
patent: 3577043 (1971-05-01), Cook
patent: 3748187 (1973-07-01), Aubuchon et al.
patent: 3748545 (1973-07-01), Beale
patent: 3936862 (1976-02-01), Moyle
patent: 4011581 (1977-03-01), Kubo
patent: 4012764 (1977-03-01), Satonaka
Enomoto Hiromu
Mitono Yoshiharu
Ohmichi Hitoshi
Yasuda Yasushi
Edlow Martin H.
Fujitsu Limited
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