Integrated semiconductor circuit structure and method for making

Details Integrated semiconductor circuit structure and method for making Integrated semiconductor circuit structure and method for making

1978-12-29

1981-06-30

Wojciechowicz, Edward J.

357 23, 357 59, 357 71, H01L 2348

Patent

active

042765579

ABSTRACT:
The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4180596 (1979-12-01), Crowder et al.
Electrochemical Soc. Inc., 1969, p. 166.
App. Physics Letters, vol. 33, No. 1, Nov. 1, 1978, pp. 826-827.

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