Semiconductor device

Details Semiconductor device Semiconductor device

1985-08-06

1986-08-26

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Bad bit

365114, 357 29, G11C 1142, H01L 2182

Patent

active

046086684

ABSTRACT:
A semiconductor device comprising a first conductor having first and second portions which are electrically disconnected from each other, and a second conductor, formed on an insulating film separating it from the first conductor, which is electrically conductive. A radiated energy beam renders the second conductor non-conductive, while simultaneously electrically connecting the first and second portions, rendering the first conductor conductive, as needed.

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patent: 4441036 (1984-04-01), Oldham
patent: 4455495 (1984-06-01), Masuhara et al.
Cheroff et al., "Flip-Flop Using Electron Beam Activated FET's", IBM Technical Disclosure Bulletin, vol. 11, No. 4, Sep. 1968, p. 396.
Minato et al., "Hi-Cmos II 4K Static RAM", 1981 IEEE Int'l. Solid-State Circuits Conf. Dig. Tech. Papers 14-15, 253, (Feb. 18, 1981).
Cenker et al., "A Fault-Tolerant 64K Dynamic RAM", 1979 IEEE Int'l. Solid-State Circuits Conf. Dig. Tech. Papers 150-51, 290, (Feb. 15, 1979).
Mano et al., "A 256K RAM Fabricated with Molybdenum-Polysilicon Technology", 1980 IEEE Int'l. Solid-State Circuits Conf. Dig. Tech. Papers 234-35, (Feb. 15, 1980).

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