Semiconductor device

Details Semiconductor device Semiconductor device

1997-06-17

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438166, H01L 2904

Patent

active

059239972

ABSTRACT:
One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600.degree. C. or less. The crystallization develops from a region where the element has been introduced in a direction parallel to a substrate. An active region of a semiconductor device is formed in a portion of the crystallized semiconductor layer in such a manner that the relation between the crystal growth direction and the direction in which the electric current of the device is selected in accordance with a desired mobility of the active region.

REFERENCES:
patent: 4068020 (1978-01-01), Reuschel
patent: 4755865 (1988-07-01), Wilson et al.
patent: 4868014 (1989-09-01), Kanai et al.
patent: 5142344 (1992-08-01), Yamazaki
patent: 5147826 (1992-09-01), Liu et al.
patent: 5242507 (1993-09-01), Iverson
patent: 5252507 (1993-10-01), Iverson
patent: 5266816 (1993-11-01), Seto et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5315132 (1994-05-01), Yamazaki
patent: 5318919 (1994-06-01), Noguchi et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5491107 (1996-02-01), Turner
patent: 5531182 (1996-07-01), Yonehara
Cuane etal. Combined CW Laser and Furnace Annealing of Amorphous Si and Ge in Contact with Some Metals:, Appl. Surf. Sci. 36 597-604, 1989.
S. Caune et al. Appl. Surf. Sci. 36(1989)597 "Combined CW laser and furnace annealing of a-Si and Ge in contact with some metals", 1989.
F. Spaepen et al. in Crucial Issues in Semic. Mater. & Proc. Technol. (S. Coffa, ed.), p. 483, "Metal-enhanced growth of silicon", 1992.
S.F. Gong et al., J. Appl. Phys. 63(3)(1988)1457 "Initial . . . Sb and a-Si thin films", Aug. 1988.
A.E. Robertson et al., J.Vac. Sci. Technol., A5(4)(1987)1447 "Metal induced crystallization of a-Si", Jul. 1987.
R.J. Nemanich et al., J. Vac. Sci. Technol. A3(3)(1985)938 "Initial reactions and silicide formation of Ti on Si . . . ", May 1985.
C. Hayzelden et al., Appl. Phys. lett. 60(2)(1992)225 "In situ TEM studies of silicide mediated crytallization of a-Si", Jan. 1992.
Hayzelden et al., "In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon", Applied Physics Letters 60 (2), Jan. 13, 1992, pp. 225-227.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon", Appl. Phys. Lett. 60(2)(1992) 225.
A.V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Phys. Stat. Sol. A95(1986)635. No month.
T. Hempel et al., "Needle-Like Crystallization of Ni-Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993. No month.
"Crystallized Si Films By Low-Temperature Rapid Thermal Annealing of Amorphous Silicon", R.Kakkad, J. Smith, W.S. Lau, S.J. Fonash, J. Appl. Phys. 65(5), Mar. 1, 1989, pp. 2069-2072.
"Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low Temperature Processing", G. Liu, S.J. Fonash, Appl. Phys. Lett. 62(20), May, 17, 1993, pp. 2554-2556.
"Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing", Gang Liu and S.J. Fonash, Appl. Phys. Lett. 55(7), Aug. 14, 1989, pp. 660-662.
"Low Temperature Selective Crystallization of Amorphous Silicon", R. Kakkad, G. Liu, S.J. Fonash, Journal of Non-Crystalline Solids, vol. 115, (1989), pp. 66-68. No month.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2287626