Semiconductor device

Details Semiconductor device Semiconductor device

1998-03-24

2000-06-06

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 94, 257 96, 257 98, 257280, 257284, 257473, 257486, H01L 310328

Patent

active

060722037

ABSTRACT:
In an HEMT, a channel forming layer is arranged above a semi-insulating substrate via a buffer layer. A spacer layer is arranged on the channel forming layer and an electron supplying layer and a Schottky contact layer are sequentially arranged on the spacer layer. A diffusion preventing layer, for preventing a metal element of a gate electrode from diffusing into the channel forming layer, is arranged in the Schottky contact layer.

REFERENCES:
patent: 4586063 (1986-04-01), Nakamura et al.
patent: 4710787 (1987-12-01), Usagawa et al.
patent: 5343057 (1994-08-01), Gerard et al.
patent: 5350709 (1994-09-01), Harada et al.
patent: 5351128 (1994-09-01), Goto et al.
patent: 5550388 (1996-08-01), Haruyama
patent: 5635735 (1997-06-01), Miyamoto et al.
patent: 5679982 (1997-10-01), Gardner
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5811843 (1998-09-01), Yamamoto et al.
patent: 5900647 (1999-05-01), Inoguchi

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2215394