Semiconductor device

Details Semiconductor device Semiconductor device

1998-01-07

2000-09-05

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257212, 257330, 257331, H01L 29739, H01L 2994

Patent

active

061147273

ABSTRACT:
A semiconductor device comprises a high-resistance n type base layer, an n type drain layer formed on one surface of the n type base layer, p type base layers selectively formed at the other surface of the n type base layer, n type source layers selectively formed at surfaces of the p type base layers, p type injection layers selectively formed at the other surface of the n type base layer in regions different from regions where the n type source layers and p type base layers are formed, a trench selectively formed to extend from a surface of each n type source layer through the p type base layer into the n type base layer, a first gate electrode buried in the trench with an insulating film interposed, a drain electrode formed on the n type drain layer, a source electrode formed on the n type source layer, and a second gate electrode formed on the p type injection layer.

REFERENCES:
patent: 4543596 (1985-09-01), Strack et al.
patent: 4584593 (1986-04-01), Tihanyi
patent: 4630084 (1986-12-01), Tihanyi
patent: 4641163 (1987-02-01), Tihanyi
patent: 4743952 (1988-05-01), Baliga
patent: 5329142 (1994-07-01), Kitagawa et al.
patent: 5381026 (1995-01-01), Shinohe et al.
patent: 5623151 (1997-04-01), Ajit

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