Semiconductor device

Details Semiconductor device Semiconductor device

1993-10-28

1995-08-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257306, 257315, 257321, H01L 2978, H01L 2710

Patent

active

054422108

ABSTRACT:
A semiconductor device has a DRAM portion forming a cache memory and a flash memory portion fabricated on a common substrate, fabricated by a process based on the process of fabricating the flash memory portion. An electrode layer common to capacitors of the DRAM portion and a floating gate layer of the flash memory portion are formed simultaneously from the same material. An electrode layer of the upper capacitor of the DRAM portion, a gate electrode layer for a transistor of the DRAM portion, and a control gate layer of the flash memory portion are formed simultaneously from the same material.

REFERENCES:
patent: 5196722 (1993-03-01), Bergendahl et al.
patent: 5290725 (1994-03-01), Tanaka et al.

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