Semiconductor device

Details Semiconductor device Semiconductor device

1992-01-27

1993-02-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257399, H01L 2968, H01L 2906

Patent

active

051875500

ABSTRACT:
A storage electrode of a trench capacitor is connected through a trench side wall contact hole to a source/drain region. A p.sup.+ region is provided between the source/drain region and an n.sup.+ region which is a part of a cell plate, and is opposite through a silicon oxide film and a capacitive insulation film to the storage electrode.

REFERENCES:
patent: 4794434 (1988-12-01), Pelley, III
patent: 4801988 (1989-01-01), Kenney
patent: 4918502 (1990-04-01), Kaga et al.
patent: 4969022 (1990-11-01), Nishimoto et al.
1988 Symposium on VLSI Technology Digest of Technical Papers (MINT), Kenney et al., "16-MBIT Merged Isolation and Node Trench SPT Cell (MINT)", pp. 25-26.
A Substrate-Plate Trench-Capacitor (SPT) Memory Cell For Dynamic Ram's, IEEE Journal of Solid-State Circuits, vol. SC-21, No. 5, Oct. 1986, pp. 627-634, by Nicky Chau-Chun Lu, et al.

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