Semiconductor device

Details Semiconductor device Semiconductor device

1994-10-05

1996-03-12

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257354, H01L 2701, H01L 2712, H01L 310392, H01L 2976

Patent

active

054988942

ABSTRACT:
On a semiconductor substrate (1), there are provided field oxide films (2,3,4), a gate oxide film (5), thin oxide films (6, 6) with film thickness almost equal to that of the gate oxide film (5), and a gate electrode (7). An oxide film (8) of the same thickness as the gate oxide film (5) is also provided so as to separate the field oxide films (3) and (4), to overlap a portion of the gate electrode (7). A high-concentration impurity layer (11, 12) is formed under each of the thin oxide films (6, 8). Source-drain areas (9, 10) are provided with end portions separated from the high-concentration impurity layer (12) and the field oxide films (3, 4).

REFERENCES:
patent: 5192993 (1993-03-01), Arai et al.

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