Semiconductor device

Details Semiconductor device Semiconductor device

1996-09-09

1998-12-22

Ostrowski, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257549, 257742, 257509, H01L 2348

Patent

active

058523278

ABSTRACT:
In a semiconductor substrate of a semiconductor device, a plural impurity layers of the same conductivity type as the substrate are formed. An impurity region of an opposite conductivity type penetrates at least one of the impurity layers to a certain depth from the main surface of the semiconductor substrate. The bottom surface of the impurity region terminates between the impurity layers where the impurity concentration is lower. A contact conductor is led out from the impurity region.

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