Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1997-09-23
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257400, H01L 2976
Patent
active
056708165
ABSTRACT:
In a semiconductor device having at least two conductive layers disposed close to each other on an element isolating insulation film formed on a first P-type region, a second P-type region is formed in a region of the first P-type region which is between the two conductive layers. The impurity concentration of the second P-type diffusion region is higher than the first P-type region. A region of the element isolating insulation film which is on the second P-type diffusion region is thin to form a thin insulation film. With the features, no inversion layer is formed in the region of the first P-type region where the second P-type diffusion region is formed. As a result, the inversion layers under the conductive layers will not be in contact with each other.
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Hatano Hiroshi
Takatsuka Satoru
Yoshii Ichiro
Kabushiki Kaisha Toshiba
Prenty Mark V.
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