Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-20
2000-05-30
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257343, 257387, H01L 2976, H01L 2994, H01L 2358
Patent
active
06069386&
ABSTRACT:
A lateral DMOST with a drain extension 8 and a source contact entirely which overlaps the gate and thus forms a screen between the gate and the drain. The source contact 15 does not overlap the poly gate 9 but lies entirely laterally of this gate. The gate itself is provided with a low-ohmic metal contact strip 18, which results in a low gate resistance. A metal screening strip 20 is provided between this gate contact strip and the metal drain contact 16, which screening strip is connected to the source contact 15 next to the tips of the contact strip 18. Said screening strip leads to a major improvement in the power gain at high frequencies, for example in the RF range. The screening strip 20 may be realized together with the source, drain, and gate contacts in a common metal layer.
REFERENCES:
patent: 5523599 (1996-06-01), Fujishima et al.
patent: 5883413 (1999-03-01), Ludikhuize
patent: 5910670 (1998-06-01), Ludikhuize
"High Performaance Silicon LDMOS Technology for 2GHz RF Power Amplifier Applications", Alan Wood et al, IEDM 96, pp. 87-90. 96,
Monin, Jr. Donald L.
U. S. Philips Corporation
Wieghaus Brian J.
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