1979-04-20
1983-03-22
Edlow, Martin H.
357 49, 357 51, 357 53, 357 54, 357 23, H01L 2904
Patent
active
043778194
ABSTRACT:
A semiconductor device including at least a resistance element formed of polycrystalline silicon having a high resistivity. An electrode is provided on the high resistance polycrystalline silicon region with a silicon dioxide film and a silicon nitride film being interposed therebetween. The electrode is coupled to the ground potential. In this manner, high stability is obtained in the behavior of the resistance element inasmuch as the formation of a parasitic MOS device under said high resistance region is suppressed, and the threshold voltage of any such MOS device is made raised.
REFERENCES:
patent: 3518494 (1970-06-01), James
patent: 3597667 (1971-08-01), Horn
patent: 4110776 (1978-08-01), Rao
Hashimoto Norikazu
Katto Hisao
Masuhara Toshiaki
Minato Osamu
Muramatsu Shin-ichi
Edlow Martin H.
Hitachi , Ltd.
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