Semiconductor device

Details Semiconductor device Semiconductor device

1993-04-28

1994-10-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257394, 257347, 257368, H01L 2978, H01L 3300

Patent

active

053550129

ABSTRACT:
A semiconductor device is an SOI type field effect transistor in which an active region is isolated and insulated by a transistor for isolation. A contact hole for isolation is formed in a gate dielectric thin film for isolation between a gate electrode of the transistor for isolation and a channel region below the gate electrode. In the semiconductor device thus structured, surplus carriers produced in a channel region below a transfer gate electrode are drawn through channel region and isolation contact hole into isolation gate electrode, thereby preventing such a disadvantageous phenomenon as a kink effect or the like due to a floating-substrate effect.

REFERENCES:
patent: 4622571 (1986-11-01), Hara
patent: 4825278 (1989-04-01), Hillenius et al.
"Reduction of Kink Effect in Thin-Film SOI MOSFET's", IEEE Electron Device Letter, by Jean-Pierre Colinge, vol. 9, No. 2, pp. 97-99, 1988.

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