Semiconductor device

Details Semiconductor device Semiconductor device

1991-08-29

1993-12-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 51, 257335, 257371, 257622, H01L 2701

Patent

active

052742601

ABSTRACT:
A latch up phenomenon is prevented by forming an insulating film on a semiconductor substrate, allowing a semiconductor layer to extend from both end portions of an opening provided in the insulating film on the semiconductor substrate onto the insulating film, forming a channel region within the opening, and utilizing semiconductor layers on the insulating film as a source and a drain. Further, in the semiconductor layer extending from the semiconductor substrate onto the insulating film, when the portion in contact with the semiconductor substrate is formed as a part of the inversion layer (channel), the width of the channel portion which utilizes the semiconductor substrate can be reduced, which enables a high-density integration to be realized.

REFERENCES:
patent: 4907047 (1990-03-01), Kato et al.
patent: 5017995 (1991-05-01), Soejima

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