Semiconductor device

Details Semiconductor device Semiconductor device

1990-01-18

1991-08-13

James, Andrew J.

357 15, 357 56, 357 59, 357 68, H01L 2978, H01L 2948, H01L 2956, H01L 2964

Patent

active

050400347

ABSTRACT:
A semiconductor device includes a semiconductor substrate as a drain region. A metal source region is located on a first surface of the substrate. The metal and the substrate constitute a Schottky junction. An insulated gate, including a gate electrode and an insulating film surrounding the gate electrode, is adjacent to the Schottky junction, such that angle formed by the Schottky junction and the insulated gate in the substrate is an acute angle. A part of the Schottky metal can be buried in the form of a pillar in the substrate, and a channel region of the Schottky junction can be formed on the pillar near the insulated gate.

REFERENCES:
patent: 4737831 (1988-04-01), Iwai
Lane et al., "Epitaxial WMOS Power Transistors", Feb. 1980, p. 349-355 of IEEE Transaction on Electron Devices, vol. ED-27, No. 2, 357 * 23.7.
Lisiak et al., "Optimization of Nonplanar Power MOS Transistor", pp. 1229-1234, IEEE Trans. on Elec. Dev. vol. ED 25.noteq.610 Oct. 1978, 357 * 23.7.

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