Semiconductor device

Details Semiconductor device Semiconductor device

1975-10-15

1977-06-28

Wojciechowicz, Edward J.

357 34, 357 39, 357 40, 357 88, 357 89, 357 90, H01L 2900, H01L 29747, H01L 2702, H01L 2972

Patent

active

040329585

ABSTRACT:
An NPN-type bipolar transistor is disclosed which has an additional P-type conductivity in its emitter region. The current-amplification factor h.sub.FE of the transistor is high when the additional region is electrically floated, while the amplification factor h.sub.FE is lower when the additional region is supplied with an emitter potential. The device is so designed and constructed that the transistor factor h.sub.FE can be variably controlled over a wide range. The transistor operates as an h.sub.FE controlled transistor. A thyristor is also disclosed which includes a cathode, a gate, and an electrically floated base electrode and which has an additional region formed in the cathode. This additional region is used as a second gate in addition to an ordinary gate, and either of the gates may be used for ON- and OFF- operations.

REFERENCES:
patent: 2822310 (1958-02-01), Stieltjes et al.
patent: 3696273 (1972-10-01), Foster

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