Semiconductor device

Details Semiconductor device Semiconductor device

1990-08-31

1991-12-31

Prenty, Mark

357 75, H01L 2702, H01L 2316

Patent

active

050775952

ABSTRACT:
On an insulating layer (32) formed on a metal substrate (31), cascode-connected power switching elements (1-6) are provided and shield patterns (101-104) are formed. Control circuits (13-18) for the switching elements (1-6) are formed on insulating layers (105, 106) formed on the shield patterns (101-104) which are fixed to potentials responsive to potentials of output electrodes of the corresponding switching elements (1-6). The control circuits (13-18) and the corresponding shield patterns (101-104) are in capacity coupling. Thus, noise arises in the control circuits (13-18) with respect to the metal substrate (31) when noise is applied to current paths of the switching elements (1-6) with respect to the metal substrate (31). As a result, viewing from the output electrodes of the switching elements (1-6), the control circuits (13-18) have noise equivalent to nothing.

REFERENCES:
patent: 4847603 (1989-07-01), Blanchard
patent: 4851831 (1989-07-01), Stern
patent: 4945396 (1990-07-01), Shigekane et al.

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