Semiconductor device

Details Semiconductor device Semiconductor device

1983-11-22

1985-12-24

James, Andrew J.

357 73, 357 71, H01L 21283, H01L 2354, H01L 2308

Patent

active

045610096

ABSTRACT:
A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.

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patent: 3716469 (1973-02-01), Bhatt et al.
patent: 3725309 (1969-01-01), Ames et al.
patent: 3759798 (1970-01-01), Graff et al.
patent: 4017890 (1977-04-01), Howard et al.
patent: 4151545 (1979-04-01), Schnepf et al.
"Segmented Stripe Devices", Ainslie et al., IBM Tech. Bulletin, vol. 13, No. 7, Dec. 1970, pp. 2011-2013.
Electrotransport in Aluminium-Leiterbahnen-Hern et al., vol. 48, (1975), Wiss. Ber. AEG-Telefunken, pp. 46-54, (German Reference).
"Long-Life Aluminum Alloy Thin-Film Conductors"-d'Heurle et al.-IBM Technical Disclosure Bulletin, vol. 15, No. 1, 6-1972, pp. 348-349.
Howard et al., "Intermetallic Compounds of Al and Transition Metals: . . . ", J. Appl. Phys. 49(7), Jul. 1970, pp. 4083-4095.
"Wissenschaftliche Berichte AEG-Telefunken, vol. 48 (1975), issue 2/3, pp. 46 to 54.
Silvestri, "Formation of Al.sub.2 O.sub.3 From Porous Aluminum . . . ", IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, pp. 3714-3716.
Comizzoll, "RCA Review", vol. 37, issue 4 (Dec. 1976), pp. 483 to 490.

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