Semiconductor device

Details Semiconductor device Semiconductor device

1996-11-20

1998-12-15

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2362

Patent

active

058500944

ABSTRACT:
The present invention relates to a semiconductor device which utilizes a first conduction MOS output transistor 11 as an output transistor. The inventive semiconductor device have a advantage that the occupied area of an electrostatic breakdown preventing circuit is smaller than that of the conventional device, and the resistance against the electrostatic breakdown is better than that of the conventional device, and further an additional manufacturing process is not required, thereby obtaining the semiconductor device with an improved resistance. The inventive device is formed that a second conduction MOS transistor 13 functions as an electrostatic breakdown preventing circuit, with a drain of which being connected to an output terminal 15, and connected in a parallel form with the output transistor.

REFERENCES:
patent: 5075691 (1991-12-01), Garay et al.
patent: 5495118 (1996-02-01), Kinoshita et al.

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