Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1998-01-16
1999-01-26
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257487, 257488, 257490, 257494, 257495, 257630, H01L 2358
Patent
active
058641670
ABSTRACT:
In a MOSFET or other high voltage device, an annular channel stopper (4) extends around the outer periphery (14) of a body portion (11) with which a device region (15) forms a p-n junction (5) operable under high reverse bias in at least one mode of operation of the device. A field plate structure (34, 34a, 34b, 34c) on an insulating layer (24) over the body portion (11) extends towards the outer periphery (14) to spread a depletion layer from the reverse-biased p-n junction (5) towards the outer periphery (14). The channel stopper (4) comprises concentrically doped stopper regions (41 to 44) with different doping concentrations and/or region widths and/or spacings, giving to the body portion (11) a non-uniform doping profile the doping of which, under the field plate structure (34, 34a, 34b, 34c), increases with distance (D) towards the outer periphery (14) to slow progressively the spread of the depletion layer under the field plate structure (34, 34a, 34b, 34c). This field plate structure (34, 34a, 34b, 34c) connected to the device region (15) and/or to a field region (35) can extend laterally over the whole of the body portion (11) between the device region (15) and a doped channel stopper region (41) in the vicinity of the outer periphery (14), and without the complication of any field plate connected to the channel stopper (4).
REFERENCES:
patent: 4691224 (1987-09-01), Takada
patent: 4707719 (1987-11-01), Whight
patent: 4927772 (1990-05-01), Arthur et al.
patent: 4954868 (1990-09-01), Bergmann et al.
patent: 5086332 (1992-02-01), Nakagawa et al.
patent: 5552625 (1996-09-01), Murakami et al.
Biren Steven R.
Hughes William
Thomas Tom
U.S. Philips Corporation
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