Semiconductor device

Details Semiconductor device Semiconductor device

1990-04-11

1991-08-27

Hille, Rolf

357 74, 357 68, H01L 2342, H01L 2344, H01L 2346

Patent

active

050437950

ABSTRACT:
Provided is a semiconductor device for power switching applications which utilizes a plurality of gate terminals provided in pressure contact with gate electrodes, the gate terminal/electrodes situated so as separate current flow therethrough at time of gate turn off into separate components, thereby reducing the transverse voltage drop of the gate electrode. In one embodiment, the invention is applied to a gate turn off (GTO) thyristor, and in another embodiment, towards a reverse conducting GTO thyristor.

REFERENCES:
patent: 4554574 (1985-11-01), Wright
patent: 4719500 (1988-01-01), Tokunoh
patent: 4775916 (1988-10-01), Kouzuchi et al.
patent: 4953004 (1990-08-01), Almenrader et al.
patent: 4956696 (1990-09-01), Hoppe et al.

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