Semiconductor device

Details Semiconductor device Semiconductor device

1989-11-17

1993-03-23

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

357 67, 252518, 252521, 338333, 338224, 257536, H01B 106, H01L 2701, H01C 1706

Patent

active

051969157

ABSTRACT:
In a semiconductor device such as hybrid IC, thermal heads, etc., a thick film resistor of the semiconductor device contains a boride particle of a metal dispersed in a glass matrix, the particle having a particles size of 0.005 to 0.1 .mu.m. Generation of a thermal stress can be suppressed and the electroconductive particles themselves form isotropic electroconductive passages by such dispersion, and the semiconductor devices can have a distinguished electroconductivity. Preferable boride of a metal is LaB.sub.6, which gives distinguished resistor characteristics.

REFERENCES:
patent: 3503801 (1967-11-01), Huang et al.
patent: 3924221 (1975-12-01), Winkler
patent: 3943168 (1976-03-01), Patterson
patent: 4512917 (1985-04-01), Donohue
patent: 4657699 (1987-04-01), Nair
patent: 4720418 (1988-01-01), Kuo
patent: 4732798 (1988-03-01), Ishida et al.
patent: 4868537 (1989-09-01), Blanchard
patent: 4893166 (1990-01-01), Geekie

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