Semiconductor device

Details Semiconductor device Semiconductor device

1999-07-02

2000-05-09

Picardat, Kevin M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

257522, 257758, 257773, H01L 214763

Patent

active

060607815

ABSTRACT:
First interconnect lines each having an electric capacity given by C and second interconnect lines respectively adjacent thereto are formed on an upper surface of an insulating film. The first interconnect lines and the second interconnect lines are electrically isolated from a substrate and are electrically floating. The second interconnect lines are connected to a third interconnect line. As a result, the second interconnect lines and the third interconnect line which are electrically connected to each other as a whole have an electric capacity given by 12C. The first interconnect lines are irradiated with charged particles. The difference in the amount of secondary electrons emitted from the first interconnect lines depending on the magnitude of the electric capacity is detected as a potential contrast and used to evaluate whether or not there is contact between the first interconnect lines and the respectively associated second interconnect lines. A semiconductor device facilitates the evaluation of whether or not there is contact between adjacent conductor patterns.

REFERENCES:
patent: 5036380 (1991-07-01), Chase
patent: 5817530 (1998-10-01), Ball
patent: 5889333 (1999-03-01), Takenaka et al.

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